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IRFBF30PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

High Voltage MOS

Case Package:

TO-220

Description:

VISHAY IRFBF30PBF Power MOSFET, N Channel, 3.6A, 900V, 3.7Ω, 10V, 4V

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Documentation:

IRFBF30PBF Datasheet (8 Pages)

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IRFBF30PBF Datasheet PDF (8 Pages)

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IRFBF30PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220

Power Rating

125 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

3.7 Ω

Polarity

N-Channel

Power Dissipation

125 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

900 V

Continuous Drain Current (Ids)

3.60 A

Rise Time

25 ns

Input Capacitance (Ciss)

1200pF @25V(Vds)

Fall Time

30 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

125 W

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IRFBF30PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

9.01 mm

Operating Temperature

-55℃ ~ 150℃

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IRFBF30PBF Environmental

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IRFBF30PBF Datasheet

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