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IRL8113LPBF
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IRL8113LPBF Datasheet PDF (13 Pages)
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IRL8113LPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262-3
Polarity
N-CH
Power Dissipation
110W (Tc)
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
105A
Rise Time
38 ns
Input Capacitance (Ciss)
2840pF @15V(Vds)
Fall Time
5 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
110W (Tc)

IRL8113LPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRL8113LPBF Documents

Infineon
13 Pages / 0.27 MByte
Infineon
2 Pages / 0.06 MByte
Infineon
1 Pages / 0.12 MByte

IRL8113 Documents

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MOSFET N-CH 30V 105A TO-220AB
Infineon
TO-220AB N-CH 30V 105A
IRF
HEXFET Power MOSFET
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TO-220AB N-CH 30V 105A
Infineon
D2PAK N-CH 30V 105A
International Rectifier
Trans MOSFET N-CH 30V 105A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 30V 105A 3Pin(2+Tab) D2PAK Tube
International Rectifier
MOSFET, 30V, 105A, 6MOHM, 23NC QG, LOGIC LEVEL, D2-PAK
Infineon
D2PAK N-CH 30V 105A
International Rectifier
MOSFET N-CH 30V 105A D2PAK
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