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IRFD014PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

DIP

Description:

VISHAY IRFD014PBF MOSFET Transistor, N Channel, 1.7A, 60V, 200mohm, 10V, 4V

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Documentation:

IRFD014PBF Datasheet (9 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRFD014PBF Datasheet PDF (9 Pages)

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IRFD014PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

4 Pin

Case/Package

DIP

Power Rating

1.3 W

Number of Positions

4 Position

Drain to Source Resistance (on) (Rds)

0.2 Ω

Polarity

N-Channel

Power Dissipation

1.3 W

Threshold Voltage

4 V

Input Capacitance

310pF @25V

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

60 V

Continuous Drain Current (Ids)

1.70 A

Rise Time

50 ns

Input Capacitance (Ciss)

310pF @25V(Vds)

Fall Time

19 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.3 W

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IRFD014PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

5 mm

Size-Width

6.29 mm

Size-Height

3.37 mm

Operating Temperature

-55℃ ~ 175℃

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IRFD014PBF Environmental

IRFD014PBF Function Overview

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