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Part Datasheet Search > MOSFETs > Infineon > IRFP150N Datasheet PDF
IRFP150N
$ 0.421
IRFP150N Datasheet PDF (10 Pages)
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IRFP150N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
42.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
36.0 mΩ
Polarity
N-Channel
Power Dissipation
160W (Tc)
Part Family
IRFP150N
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
42.0 A
Rise Time
56 ns
Input Capacitance (Ciss)
1900pF @25V(Vds)
Fall Time
40 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
160W (Tc)

IRFP150N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFP150N Documents

Infineon
10 Pages / 1.44 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFP150 Documents

International Rectifier
MOSFET N-CH 100V 41A TO-247AC
VISHAY
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
IXYS Semiconductor
HIGH VOLTAGE POWER MOSFET DIE
Vishay Siliconix
MOSFET N-CH 100V 41A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
Harris
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Fairchild
Trans MOSFET N-CH Si 100V 40A 3Pin(3+Tab) TO-247
Intersil
40A 100V 0.055Ω N-CH, Si PMOS TO-247
ST Microelectronics
40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
Samsung
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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