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IRFD9024PBF Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

DIP-4

Description:

HVMDIP-4P-CH 60V 1.6A 280mΩ

Pictures:

3D Model

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Documentation:

IRFD9024PBF Datasheet (9 Pages)

Package Outline Dimension on8 Page

IRFD9024PBF Datasheet PDF (9 Pages)

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IRFD9024PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

4 Pin

Voltage Rating (DC)

-60.0 V

Current Rating

-1.60 A

Case/Package

DIP-4

Power Rating

1.3 W

Number of Positions

4 Position

Drain to Source Resistance (on) (Rds)

0.28 Ω

Polarity

P-Channel

Power Dissipation

1.3 W

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

-60.0 V

Continuous Drain Current (Ids)

-1.60 A

Rise Time

68 ns

Input Capacitance (Ciss)

570pF @25V(Vds)

Input Power (Max)

1.3 W

Fall Time

29 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.3 W

View Datasheet >

IRFD9024PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

5 mm

Size-Width

6.29 mm

Size-Height

3.37 mm

Operating Temperature

-55℃ ~ 175℃

Minimum Packing Quantity

2500

View Datasheet >

IRFD9024PBF Environmental

IRFD9024PBF Function Overview

IRFD9024PBF Documents

IRFD9024PBF Datasheet

VISHAY

9 Pages / 1.81 MByte

IRFD9024PBF Other Datasheet PDF

VISHAY

10 Pages / 1.65 MByte

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Power MOSFET(Vdss=-60V, Rds(on)=0.28Ω, Id=-1.6A)

IRFD9024PBF Datasheet PDF

VISHAY

HVMDIP-4P-CH 60V 1.6A 280mΩ

IRFD9024PBF Datasheet PDF

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MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.28Ω; ID -1.6A; HD-1; PD 1.3W; VGS +/-20V

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Vishay Intertechnology

Power Field-Effect Transistor, 1.6A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4

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