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IRL640PBF
$ 1.319
IRL640PBF Datasheet PDF (8 Pages)
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IRL640PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
17.0 A
Case/Package
TO-220-3
Power Rating
125 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.18 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
17.0 A
Rise Time
83.0 ns
Input Capacitance (Ciss)
1800pF @25V(Vds)
Input Power (Max)
125 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125000 mW

IRL640PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Minimum Packing Quantity
50

IRL640PBF Documents

VISHAY
8 Pages / 1.62 MByte
VISHAY
9 Pages / 0.99 MByte

IRL640 Documents

VISHAY
TO-220AB N-CH 200V 17A
Vishay Siliconix
MOSFET N-CH 200V 17A TO-220AB
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET N-CH 200V 17A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Samsung
Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Fairchild
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
ON Semiconductor
Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220, 1000-TUBE
IRF
HEXFET Power MOSFET
VISHAY
TO-220-3 N-CH 200V 17A 180mΩ
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