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Part Datasheet Search > MOSFETs > Infineon > IRFH3707TRPBF Datasheet PDF
IRFH3707TRPBF
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IRFH3707TRPBF Datasheet PDF (10 Pages)
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IRFH3707TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PQFN-8
Power Rating
2.8 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0094 Ω
Polarity
N-CH
Power Dissipation
2.8 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
12A
Input Capacitance (Ciss)
755pF @15V(Vds)
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
2.8W (Ta)

IRFH3707TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Width
5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH3707TRPBF Documents

Infineon
10 Pages / 0.29 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
6 Pages / 3.97 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRFH3707 Documents

Infineon
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package
Infineon
PQFN N-CH 30V 12A
International Rectifier
Single N-Channel 30V 2.8W 5.4NC SMT Hexfet Power Mosfet - PQFN 3 x 3mm
International Rectifier
MOSFET MOSFT 30V 12A 12.4mOhm 5.4NC
Infineon
PQFN N-CH 30V 12A
Infineon
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3 x 3 package
Infineon
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3 x 3 package
International Rectifier
Power MOSFET
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