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Part Datasheet Search > MOSFETs > Infineon > IRFH5020TR2PBF Datasheet PDF
IRFH5020TR2PBF
$ 2.03
IRFH5020TR2PBF Datasheet PDF (9 Pages)
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IRFH5020TR2PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
QFN-8
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.047 Ω
Polarity
N-CH
Power Dissipation
8.3 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
5.1A
Rise Time
7.7 ns
Input Capacitance (Ciss)
2290pF @100V(Vds)
Fall Time
6 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
3.6W (Ta), 8.3W (Tc)

IRFH5020TR2PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
6 mm
Size-Width
5 mm
Size-Height
0.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH5020TR2PBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
4 Pages / 0.07 MByte
Infineon
4 Pages / 0.07 MByte

IRFH5020TR2 Documents

International Rectifier
MOSFET N-CH 200V 5.1A 8VQFN
Infineon
PQFN N-CH 200V 5.1A
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