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Part Datasheet Search > MOSFETs > Infineon > IRFH9310TRPBF Datasheet PDF
IRFH9310TRPBF
$ 0.504
IRFH9310TRPBF Datasheet PDF (9 Pages)
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IRFH9310TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerVDFN-8
Power Rating
3.1 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0037 Ω
Polarity
P-Channel
Power Dissipation
3.1 W
Threshold Voltage
1.9 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
21A
Rise Time
47 ns
Input Capacitance (Ciss)
5250pF @15V(Vds)
Input Power (Max)
3.1 W
Fall Time
70 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.1W (Ta)

IRFH9310TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6 mm
Size-Width
5 mm
Size-Height
0.95 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH9310TRPBF Documents

Infineon
9 Pages / 0.28 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRFH9310 Documents

Infineon
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package
Infineon
PQFN P-CH 30V 21A
International Rectifier
Trans MOSFET P-CH 30V 21A 8Pin PQFN T/R
International Rectifier
T&R / MOSFET, P-CHANNEL, -30V, -40A, 4.6mOhm, -4.5V capable, PQFN5x6
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