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IRFM120ATF Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TO-261-4

Description:

Trans MOSFET N-CH 100V 2.3A 4Pin(3+Tab) SOT-223 T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IRFM120ATF Datasheet (7 Pages)

IRFM120ATF Datasheet PDF (7 Pages)

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IRFM120ATF Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

100 V

Current Rating

2.30 A

Case/Package

TO-261-4

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.2 Ω

Polarity

N-Channel

Power Dissipation

2.4 W

Threshold Voltage

4 V

Input Capacitance

480 pF

Gate Charge

22.0 nC

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

60.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

2.30 A

Rise Time

14 ns

Input Capacitance (Ciss)

480pF @25V(Vds)

Input Power (Max)

2.4 W

Fall Time

28 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2.4W (Ta)

View Datasheet >

IRFM120ATF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

6.7 mm

Size-Width

3.7 mm

Size-Height

1.7 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

IRFM120ATF Environmental

IRFM120ATF Export Classifications

IRFM120ATF Function Overview

IRFM120ATF Documents

IRFM120ATF Datasheet

Fairchild

7 Pages / 0.25 MByte

IRFM120ATF Other Datasheet PDF

Fairchild

8 Pages / 0.26 MByte

IRFM120ATF Drawing Diagrams

Fairchild

1 Pages / 0.06 MByte

IRFM120ATF Other References

Fairchild

1 Pages / 0.14 MByte

IRFM120 Documents

IRFM120ATF Datasheet PDF

Fairchild

Trans MOSFET N-CH 100V 2.3A 4Pin(3+Tab) SOT-223 T/R

IRFM120ATF Datasheet PDF

ON Semiconductor

Trans MOSFET N-CH 100V 2.3A 4Pin(3+Tab) SOT-223 T/R

IRFM120A Datasheet PDF

Fairchild

N-CHANNEL POWER MOSFET

IRFM120A Datasheet PDF

ON Semiconductor

Power Field-Effect Transistor

IRFM120A Datasheet PDF

Samsung

Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN

IRFM120A Datasheet PDF

Fenghua

Transistor

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