IRFI640GPBF Datasheet PDF - VISHAY

●The IRFI640GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.

● Isolated package

● 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation

● 4.8mm Sink to lead creepage distance

● Dynamic dV/dt rating

● Low thermal resistance