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IXFH30N60P
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IXFH30N60P Datasheet PDF (5 Pages)
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IXFH30N60P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
30.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
240 mΩ
Polarity
N-Channel
Power Dissipation
500 W
Input Capacitance
4.00 nF
Gate Charge
82.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
30.0 A
Input Capacitance (Ciss)
4000pF @25V(Vds)
Power Dissipation (Max)
500W (Tc)

IXFH30N60P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH30N60P Documents

IXYS Semiconductor
5 Pages / 0.31 MByte

IXFH30N60 Documents

IXYS Semiconductor
Single N-Channel 600V 500W 82NC Through Hole Power Mosfet - TO-247
IXYS Semiconductor
Trans MOSFET N-CH 600V 30A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Mosfet n-Ch 600V 30A To-247ad
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