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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFI840GLCPBF Datasheet PDF
IRFI840GLCPBF
$ 1.757

IRFI840GLCPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
850 mΩ
Power Dissipation
40000 mW
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
500 V
Rise Time
25 ns
Input Capacitance (Ciss)
1100pF @25V(Vds)
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
40W (Tc)

IRFI840GLCPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFI840GLCPBF Documents

Vishay Siliconix
10 Pages / 0.93 MByte
Vishay Siliconix
8 Pages / 1.61 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFI840 Documents

VISHAY
TO-220-3 N-CH 500V 4.6A 850mΩ
VISHAY
TO-220-3 N-CH 500V 4.5A 850mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.85Ω; ID 4.6A; TO-220 Full-Pak; PD 40W
Vishay Siliconix
MOSFET N-CH 500V 4.5A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 500V 4.5A 3Pin(3+Tab) TO-220FP
Vishay Siliconix
Trans MOSFET N-CH 500V 4.6A 3Pin(3+Tab) TO-220 Full-Pak
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package0
International Rectifier
MOSFET N-CH 500V 4.5A TO220FP
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagey
Vishay Siliconix
MOSFET N-CH 500V 4.6A TO220FP
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