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IRFIBC30G
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IRFIBC30G Datasheet PDF (6 Pages)
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IRFIBC30G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
600 V
Current Rating
2.50 A
Polarity
N-Channel
Power Dissipation
35.0 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
2.50 A

IRFIBC30G Documents

International Rectifier
6 Pages / 0.16 MByte

IRFIBC30 Documents

International Rectifier
HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2Ω, ID = 2.5A
IRF
Power MOSFET(Vdss=600V, Rds(on)=2.2Ω, Id=2.5A)
VISHAY
TO-220-3 N-CH 600V 2.5A 2.2Ω
Vishay Siliconix
MOSFET N-CH 600V 2.5A TO220FP
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 2.2Ω; ID 2.5A; TO-220 Full-Pak; PD 35W
International Rectifier
MOSFET N-CH 600V 2.5A TO220FP
International Rectifier
MOSFET N-CH 600V 2.5A TO220FP
Vishay Siliconix
MOSFET N-CH 600V 2.5A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 600V 2.5A 3Pin(3+Tab) TO-220FP
Vishay Intertechnology
Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPACK-3
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