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Part Datasheet Search > BJTs > ON Semiconductor > MJ11028G Datasheet PDF
MJ11028G
$ 3.183
MJ11028G Datasheet PDF (4 Pages)
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MJ11028G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Voltage Rating (DC)
50.0 V
Current Rating
50.0 A
Case/Package
TO-204-2
Number of Positions
2 Position
Polarity
NPN
Power Dissipation
300 W
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
50A
hFE Min
1000 @25A, 5V
hFE Max
18000
Input Power (Max)
300 W
DC Current Gain (hFE)
18
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300000 mW

MJ11028G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Width
26.67 mm
Operating Temperature
-55℃ ~ 200℃ (TJ)

MJ11028G Documents

ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
6 Pages / 0.18 MByte

MJ11028 Documents

ON Semiconductor
Trans Darlington NPN 60V 50A 3Pin(2+Tab) TO-204 Tray
Semelab
SEMELAB MJ11028 Bipolar (BJT) Single Transistor, Darlington, NPN, 60V, 300W, 50A, 1000 hFE
Motorola
50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300W
NTE Electronics
t-Npn Si-Gen Pur Amp Darl
Mospec
POWER TRANSISTOR(50A,60-120V,300W)
TT Electronics Resistors
Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
Inchange Semiconductor
Transistor
Advanced Semiconductor
Transistor
New Jersey Semiconductor
Trans Darlington NPN 60V 50A 3Pin(2+Tab) TO-204 Tray
ON Semiconductor
TO-204 NPN 60V 50A
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