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IRFIZ34GPBF
$ 1.726
IRFIZ34GPBF Datasheet PDF (8 Pages)
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IRFIZ34GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.05 Ω
Polarity
N-Channel
Power Dissipation
42 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
20.0 A
Rise Time
100 ns
Input Capacitance (Ciss)
1200pF @25V(Vds)
Input Power (Max)
42 W
Fall Time
52 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
42 W

IRFIZ34GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Height
9.8 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
Minimum Packing Quantity
50

IRFIZ34GPBF Documents

VISHAY
8 Pages / 2.91 MByte
VISHAY
2 Pages / 0.12 MByte

IRFIZ34 Documents

Vishay Siliconix
Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3
Infineon
Power Field-Effect Transistor, 21A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Fairchild
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Vishay Intertechnology
Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
TO-220FP N-CH 55V 21A
VISHAY
TO-220-3 N-CH 60V 37A 18mΩ
International Rectifier
Trans MOSFET N-CH 55V 21A 3Pin(3+Tab) TO-220FP Tube
Vishay Semiconductor
Trans MOSFET N-CH 60V 20A 3Pin(3+Tab) TO-220FP
International Rectifier
MOSFET N-CH 55V 21A TO220FP
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