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FQD17N08LTM
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FQD17N08LTM Datasheet PDF
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FQD17N08LTM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
80 V
Rise Time
290 ns
Input Capacitance (Ciss)
520pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
75 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

FQD17N08LTM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQD17N08LTM Documents

ON Semiconductor
0 Pages / 1.35 MByte

FQD17N08 Documents

Fairchild
80V N-Channel MOSFET
ON Semiconductor
Power MOSFET, N-Channel, Logic Level, QFET®, 80 V, 12.9 A, 100 mΩ, DPAK, 2500-REEL
Fairchild
Trans MOSFET N-CH 80V 12.9A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
N-Channel QFET® MOSFET 80V, 12.9A, 100mΩ
Fairchild
Trans MOSFET N-CH 80V 12.9A 3Pin(2+Tab) DPAK T/R
Fairchild
N-Channel QFET MOSFET 80V, 12.9A, 100m
ON Semiconductor
MOSFET N-CH 80V 12.9A DPAK
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