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Part Datasheet Search > MOSFETs > International Rectifier > IRFP140NPBF Datasheet PDF
IRFP140NPBF
$ 0.581
IRFP140NPBF Datasheet PDF (9 Pages)
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IRFP140NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
33.0 A
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
0.052 Ω
Polarity
N-Channel
Power Dissipation
140 W
Part Family
IRFP140N
Threshold Voltage
4 V
Input Capacitance
1400pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
33.0 A
Rise Time
39.0 ns
Input Capacitance (Ciss)
1400pF @25V(Vds)
Input Power (Max)
140 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRFP140NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.87 mm
Size-Width
5.31 mm
Size-Height
20.7 mm
Operating Temperature
-55℃ ~ 175℃

IRFP140NPBF Documents

International Rectifier
9 Pages / 1 MByte

IRFP140 Documents

Fairchild
Trans MOSFET N-CH 100V 31A 3Pin (3+Tab) TO-247
Vishay Siliconix
Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Vishay Semiconductor
Trans MOSFET N-CH 100V 31A 3Pin(3+Tab) TO-247AC
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Vishay Intertechnology
Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
Infineon
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Intersil
31A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
Samsung
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
National Semiconductor
POWER, FET
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