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Part Datasheet Search > MOSFETs > Infineon > IRFP140NPBF Datasheet PDF
IRFP140NPBF
$ 0.64
IRFP140NPBF Datasheet PDF (9 Pages)
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IRFP140NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
94 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.052 Ω
Polarity
N-Channel
Power Dissipation
94 W
Threshold Voltage
4 V
Input Capacitance
1400pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
33A
Rise Time
39 ns
Input Capacitance (Ciss)
1400pF @25V(Vds)
Input Power (Max)
140 W
Fall Time
33 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
140W (Tc)

IRFP140NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.9 mm
Size-Width
5.3 mm
Size-Height
20.3 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFP140NPBF Documents

Infineon
9 Pages / 0.34 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte
Infineon
1 Pages / 0.12 MByte

IRFP140 Documents

Fairchild
Trans MOSFET N-CH 100V 31A 3Pin (3+Tab) TO-247
Vishay Siliconix
Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Vishay Semiconductor
Trans MOSFET N-CH 100V 31A 3Pin(3+Tab) TO-247AC
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Vishay Intertechnology
Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
Infineon
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Intersil
31A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
Samsung
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
National Semiconductor
POWER, FET
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