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IRFP150NPBF
$ 0.567
IRFP150NPBF Datasheet PDF (8 Pages)
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IRFP150NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
42.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
0.036 Ω
Polarity
N-Channel
Power Dissipation
160 W
Part Family
IRFP150N
Input Capacitance
1900pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
42.0 A
Rise Time
56.0 ns
Input Capacitance (Ciss)
1900pF @25V(Vds)
Input Power (Max)
160 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRFP150NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Size-Length
15.9 mm
Size-Height
20.3 mm
Operating Temperature
-55℃ ~ 175℃

IRFP150NPBF Documents

International Rectifier
8 Pages / 0.27 MByte
International Rectifier
23 Pages / 0.55 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
3 Pages / 0.03 MByte

IRFP150 Documents

International Rectifier
MOSFET N-CH 100V 41A TO-247AC
VISHAY
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
IXYS Semiconductor
HIGH VOLTAGE POWER MOSFET DIE
Vishay Siliconix
MOSFET N-CH 100V 41A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
Harris
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Fairchild
Trans MOSFET N-CH Si 100V 40A 3Pin(3+Tab) TO-247
Intersil
40A 100V 0.055Ω N-CH, Si PMOS TO-247
ST Microelectronics
40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
Samsung
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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