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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFP150PBF Datasheet PDF
IRFP150PBF
$ 2.344

IRFP150PBF Datasheet PDF - Vishay Siliconix

Manufacturer:
Vishay Siliconix
Category:
MOSFETs
Case Package:
TO-247-3
Description:
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
IRFP150PBF Datasheet (9 Pages)
Package Outline Dimension on8 Page
Part Numbering System on1 Page
IRFP150PBF Datasheet PDF (9 Pages)
View Datasheet
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IRFP150PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
230000 mW
Drain to Source Voltage (Vds)
100 V
Rise Time
120 ns
Input Capacitance (Ciss)
2800pF @25V(Vds)
Fall Time
81 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
230W (Tc)
View Datasheet >

IRFP150PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)
View Datasheet >

IRFP150PBF Documents

IRFP150PBF Datasheet
Vishay Siliconix
9 Pages / 1.44 MByte
IRFP150PBF Other Datasheet PDF
Vishay Siliconix
9 Pages / 1.44 MByte
IRFP150PBF Other References
Vishay Siliconix
1 Pages / 0.12 MByte

IRFP150 Documents

IRFP150 Datasheet PDF
International Rectifier
MOSFET N-CH 100V 41A TO-247AC
IRFP150 Datasheet PDF
VISHAY
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
IRFP150 Datasheet PDF
IXYS Semiconductor
HIGH VOLTAGE POWER MOSFET DIE
IRFP150 Datasheet PDF
Vishay Siliconix
MOSFET N-CH 100V 41A TO-247AC
IRFP150 Datasheet PDF
Vishay Semiconductor
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
IRFP150 Datasheet PDF
Harris
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
IRFP150 Datasheet PDF
Fairchild
Trans MOSFET N-CH Si 100V 40A 3Pin(3+Tab) TO-247
IRFP150 Datasheet PDF
Intersil
40A 100V 0.055Ω N-CH, Si PMOS TO-247
IRFP150 Datasheet PDF
ST Microelectronics
40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
IRFP150 Datasheet PDF
Samsung
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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