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IRFP260PBF
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IRFP260PBF Datasheet PDF (9 Pages)
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IRFP260PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
46.0 A
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
55 mΩ
Polarity
N-Channel
Power Dissipation
280 W
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
46.0 A
Rise Time
120 ns
Input Capacitance (Ciss)
5200pF @25V(Vds)
Input Power (Max)
280 W
Fall Time
94 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
280W (Tc)

IRFP260PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.87 mm
Size-Width
5.31 mm
Size-Height
20.7 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
500

IRFP260PBF Documents

VISHAY
9 Pages / 1.72 MByte
VISHAY
9 Pages / 1.44 MByte

IRFP260 Documents

IXYS Semiconductor
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AD
VISHAY
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AC
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Vishay Siliconix
Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
Infineon
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Infineon
TO-247AC N-CH 200V 50A
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ω; ID 50A; TO-247AC; PD 300W; VGS +/-20V
Infineon
TO-247AC N-CH 200V 50A
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