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IRFR9110PBF
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IRFR9110PBF Datasheet PDF (11 Pages)
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IRFR9110PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-3.10 A
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.2 Ω
Polarity
P-Channel
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
-100 V
Continuous Drain Current (Ids)
-3.10 A
Rise Time
27 ns
Input Capacitance (Ciss)
200pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)

IRFR9110PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
2000

IRFR9110PBF Documents

VISHAY
11 Pages / 1.81 MByte
VISHAY
11 Pages / 0.76 MByte

IRFR9110 Documents

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Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
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Power Field-Effect Transistor, 3.2A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
VISHAY
TO-252-3P-CH 100V 3.1A 1.2Ω
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TO-252-3P-CH 100V 3.1A 1.2Ω
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