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Part Datasheet Search > MOSFETs > ST Microelectronics > STP18N55M5 Datasheet PDF
STP18N55M5
$ 1.166
STP18N55M5 Datasheet PDF (22 Pages)
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STP18N55M5 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.18 Ω
Polarity
N-Channel
Power Dissipation
90 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Rise Time
9.5 ns
Input Capacitance (Ciss)
1260pF @100V(Vds)
Input Power (Max)
90 W
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
110W (Tc)

STP18N55M5 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
150℃ (TJ)

STP18N55M5 Documents

ST Microelectronics
22 Pages / 1.22 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
24 Pages / 1.5 MByte
ST Microelectronics
4 Pages / 0.01 MByte

STP18N55 Documents

ST Microelectronics
STMICROELECTRONICS STP18N55M5 Power MOSFET, N Channel, 14A, 600V, 0.18Ω, 10V, 4V
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