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Part Datasheet Search > MOSFETs > International Rectifier > IRFS7530PBF Datasheet PDF
IRFS7530PBF
$ 3.266
IRFS7530PBF Datasheet PDF (12 Pages)
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IRFS7530PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
0.00165 Ω
Polarity
N-Channel
Power Dissipation
375 W
Threshold Voltage
3.7 V
Drain to Source Voltage (Vds)
60 V
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRFS7530PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube

IRFS7530PBF Documents

International Rectifier
12 Pages / 0.63 MByte

IRFS7530 Documents

Infineon
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Infineon
D2PAK N-CH 60V 338A
Infineon
D2PAK N-CH 60V 295A
Infineon
D2PAK N-CH 60V 338A
Infineon
D2PAK N-CH 60V 295A
International Rectifier
The IRFS7530TRL7PP is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
International Rectifier
Trans MOSFET N-CH 60V 295A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 60V 338A 7Pin(6+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 60V 295A 3Pin(2+Tab) D2PAK T/R
Infineon
60V Single N-Channel HEXFET Power MOSFET in a 7Pin D2-Pak package
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