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Part Datasheet Search > MOSFETs > Infineon > IRFS7530TRLPBF Datasheet PDF
IRFS7530TRLPBF
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IRFS7530TRLPBF Datasheet PDF (12 Pages)
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IRFS7530TRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
375 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.00165 Ω
Polarity
N-Channel
Power Dissipation
375 W
Threshold Voltage
3.7 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
295A
Rise Time
141 ns
Input Capacitance (Ciss)
13703pF @25V(Vds)
Fall Time
104 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375 W

IRFS7530TRLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFS7530TRLPBF Documents

Infineon
12 Pages / 0.29 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
9 Pages / 0.11 MByte

IRFS7530 Documents

Infineon
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Infineon
D2PAK N-CH 60V 338A
Infineon
D2PAK N-CH 60V 295A
Infineon
D2PAK N-CH 60V 338A
Infineon
D2PAK N-CH 60V 295A
International Rectifier
The IRFS7530TRL7PP is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
International Rectifier
Trans MOSFET N-CH 60V 295A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 60V 338A 7Pin(6+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 60V 295A 3Pin(2+Tab) D2PAK T/R
Infineon
60V Single N-Channel HEXFET Power MOSFET in a 7Pin D2-Pak package
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