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Part Datasheet Search > MOSFETs > Infineon > IRFU024NPBF Datasheet PDF
IRFU024NPBF
$ 0.188
IRFU024NPBF Datasheet PDF (11 Pages)
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IRFU024NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Power Rating
38 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.075 Ω
Polarity
N-CH
Power Dissipation
45 W
Threshold Voltage
4 V
Input Capacitance
370 pF
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
17A
Rise Time
34 ns
Input Capacitance (Ciss)
370pF @25V(Vds)
Input Power (Max)
45 W
Fall Time
27 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
45W (Tc)

IRFU024NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.73 mm
Size-Width
2.39 mm
Size-Height
6.22 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFU024NPBF Documents

Infineon
11 Pages / 0.39 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.15 MByte

IRFU024 Documents

Vishay Siliconix
MOSFET N-CH 60V 14A I-PAK
VISHAY
MOSFET N-CH 60V 14A I-PAK
International Rectifier
HEXFET Power MOSFET
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(3+Tab) IPAK
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Infineon
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Fairchild
Power Field-Effect Transistor, 15A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Kersemi Electronic
Power MOSFET
Infineon
IPAK N-CH 55V 17A
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