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NTZD3152PT1G
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NTZD3152PT1G Datasheet PDF (5 Pages)
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NTZD3152PT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Voltage Rating (DC)
-20.0 V
Current Rating
-430 mA
Case/Package
SOT-563-6
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.9 Ω
Polarity
P-Channel, Dual P-Channel
Power Dissipation
280 mW
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Gate to Source)
±6.00 V
Continuous Drain Current (Ids)
430 mA
Rise Time
12 ns
Input Capacitance (Ciss)
175pF @16V(Vds)
Input Power (Max)
250 mW
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
280 mW

NTZD3152PT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
1.7 mm
Size-Width
1.3 mm
Size-Height
0.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTZD3152PT1G Documents

ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
100 Pages / 1.52 MByte
ON Semiconductor
2 Pages / 0.29 MByte
ON Semiconductor
1 Pages / 0.15 MByte

NTZD3152PT1 Documents

ON Semiconductor
Small Signal MOSFET -20V -430mA 900mOhm Dual P-Channel SOT-563 with ESD Protection, SOT-563, 6 LEAD, 4000-REEL
ON Semiconductor
Trans MOSFET P-CH 20V 0.43A 6Pin SOT-563 T/R
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