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Part Datasheet Search > MOSFETs > Infineon > IRFU9024NPBF Datasheet PDF
IRFU9024NPBF
$ 0.163
IRFU9024NPBF Datasheet PDF (11 Pages)
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IRFU9024NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Power Rating
38 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.175 Ω
Polarity
P-Channel
Power Dissipation
38 W
Threshold Voltage
4 V
Input Capacitance
350 pF
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
11A
Rise Time
55 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
38 W
Fall Time
37 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
38W (Tc)

IRFU9024NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
2.39 mm
Size-Height
6.22 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFU9024NPBF Documents

Infineon
11 Pages / 1.35 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
7 Pages / 0.14 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.14 MByte

IRFU9024 Documents

International Rectifier
MOSFET P-CH 60V 8.8A I-PAK
Vishay Siliconix
MOSFET P-CH 60V 8.8A I-PAK
VISHAY
IPAK P-CH 60V 8.8A
Vishay Semiconductor
Trans MOSFET P-CH 60V 8.8A 3Pin(3+Tab) IPAK
Samsung
P-CHANNEL POWER MOSFETS
Vishay Intertechnology
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, I-PAK-3
Infineon
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3
Infineon
IPAK P-CH 55V 11A
VISHAY
TO-251-3P-CH 60V 8.8A 280mΩ
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ω; ID -11A; I-Pak (TO-251AA); PD 38W
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