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IRFU9024PBF
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IRFU9024PBF Datasheet PDF (11 Pages)
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IRFU9024PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-8.80 A
Case/Package
IPAK-3
Polarity
P-Channel
Power Dissipation
42.0 W
Drain to Source Voltage (Vds)
-60.0 V
Breakdown Voltage (Drain to Source)
-60.0 V
Continuous Drain Current (Ids)
-8.80 A
Rise Time
68.0 ns

IRFU9024PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Lead Length
9.65 mm

IRFU9024PBF Documents

International Rectifier
11 Pages / 1.11 MByte
International Rectifier
11 Pages / 1.99 MByte

IRFU9024 Documents

International Rectifier
MOSFET P-CH 60V 8.8A I-PAK
Vishay Siliconix
MOSFET P-CH 60V 8.8A I-PAK
VISHAY
IPAK P-CH 60V 8.8A
Vishay Semiconductor
Trans MOSFET P-CH 60V 8.8A 3Pin(3+Tab) IPAK
Samsung
P-CHANNEL POWER MOSFETS
Vishay Intertechnology
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, I-PAK-3
Infineon
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3
Infineon
IPAK P-CH 55V 11A
VISHAY
TO-251-3P-CH 60V 8.8A 280mΩ
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ω; ID -11A; I-Pak (TO-251AA); PD 38W
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