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IRFU9120NPBF Datasheet PDF - International Rectifier

Manufacturer:

International Rectifier

Category:

MOSFETs

Case Package:

TO-251-3

Description:

Trans MOSFET P-CH 100V 6.6A 3Pin(3+Tab) IPAK Tube

Pictures:

3D Model

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Product Pictures

Documentation:

IRFU9120NPBF Datasheet (11 Pages)

Package Outline Dimension on8 Page 9 Page

IRFU9120NPBF Datasheet PDF (11 Pages)

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IRFU9120NPBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

-100 V

Current Rating

-6.60 A

Case/Package

TO-251-3

Drain to Source Resistance (on) (Rds)

0.48 Ω

Polarity

P-Channel

Power Dissipation

40 W

Part Family

IRFU9120N

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

-100 V

Continuous Drain Current (Ids)

-6.60 A

Rise Time

47.0 ns

Input Capacitance (Ciss)

350pF @25V(Vds)

Input Power (Max)

40 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

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IRFU9120NPBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Rail, Tube

Size-Length

6.73 mm

Size-Height

6.22 mm

Operating Temperature

-55℃ ~ 150℃

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IRFU9120NPBF Environmental

IRFU9120NPBF Function Overview

IRFU9120NPBF Documents

IRFU9120NPBF Datasheet

International Rectifier

11 Pages / 0.11 MByte

IRFU9120 Documents

IRFU9120 Datasheet PDF

International Rectifier

MOSFET P-CH 100V 5.6A I-PAK

IRFU9120 Datasheet PDF

VISHAY

MOSFET P-CH 100V 5.6A I-PAK

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Vishay Siliconix

MOSFET P-CH 100V 5.6A I-PAK

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Intersil

5.6A, 100V, 0.6Ω, P-Channel Power MOSFETs

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Fairchild

5.6A, 100V, 0.6Ω, P-Channel Power MOSFETs

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Vishay Intertechnology

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

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Samsung

Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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Harris

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IRFU9120 Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH 100V 5.6A 3Pin(3+Tab) IPAK

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Infineon

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

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