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IRFUC20PBF
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IRFUC20PBF Datasheet PDF (11 Pages)
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IRFUC20PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
4.4 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
2.00 A
Rise Time
23 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5 W

IRFUC20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.73 mm
Size-Width
2.38 mm
Size-Height
6.22 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFUC20PBF Documents

VISHAY
11 Pages / 1.08 MByte
VISHAY
11 Pages / 1.08 MByte
VISHAY
2 Pages / 0.04 MByte

IRFUC20 Documents

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Kersemi Electronic
Power MOSFET
Vishay Intertechnology
VISHAY
Single N-Channel 600V 4.4Ω Through Hole Power Mosfet - IPAK (TO-251)
Vishay Siliconix
MOSFET N-CH 600V 2A I-PAK
Vishay Semiconductor
VISHAY IRFUC20PBF Power MOSFET, N Channel, 2A, 600V, 4.4Ω, 10V, 4V
International Rectifier
MOSFET N-CH 600V 2A I-PAK
Kersemi Electronic
Power MOSFET
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