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Part Datasheet Search > MOSFETs > Infineon > IRLU3636PBF Datasheet PDF
IRLU3636PBF
$ 0.977
IRLU3636PBF Datasheet PDF (10 Pages)
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IRLU3636PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Power Rating
143 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0054 Ω
Polarity
N-CH
Power Dissipation
143 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
99A
Rise Time
216 ns
Input Capacitance (Ciss)
3779pF @50V(Vds)
Fall Time
96 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
143W (Tc)

IRLU3636PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
2.39 mm
Size-Height
7.49 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLU3636PBF Documents

Infineon
10 Pages / 0.37 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRLU3636 Documents

Infineon
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Infineon
IPAK N-CH 60V 99A
International Rectifier
N CHANNEL MOSFET, 60V, 99A, IPAK TranN CHANNEL MOSFET, 60V, 99A, IPAK
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