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IRFZ46ZL
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IRFZ46ZL Datasheet PDF (13 Pages)
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IRFZ46ZL Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
55.0 V
Current Rating
51.0 A
Case/Package
TO-262
Drain to Source Resistance (on) (Rds)
10.9 mΩ
Drain to Source Voltage (Vds)
55.0 V
Breakdown Voltage (Drain to Source)
55.0V (min)
Continuous Drain Current (Ids)
51.0 A
Rise Time
63.0 ns

IRFZ46ZL Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk

IRFZ46ZL Documents

International Rectifier
13 Pages / 0.27 MByte
International Rectifier
12 Pages / 0.27 MByte

IRFZ46 Documents

Vishay Siliconix
MOSFET N-Chan 60V 50A
International Rectifier
50V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
New Jersey Semiconductor
Trans MOSFET N-CH 50V 50A 3Pin(3+Tab) TO-220ABO
IRF
Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)
Infineon
TO-220AB N-CH 55V 53A
Infineon
D2PAK N-CH 55V 53A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de
Infineon
TO-262 N-CH 55V 53A
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