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Part Datasheet Search > MOSFETs > Infineon > IRFZ46ZSPBF Datasheet PDF
IRFZ46ZSPBF
$ 1.047
IRFZ46ZSPBF Datasheet PDF (12 Pages)
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IRFZ46ZSPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
82 W
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
13.6 mΩ
Polarity
N-CH
Power Dissipation
82 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
51A
Rise Time
63 ns
Input Capacitance (Ciss)
1460pF @25V(Vds)
Input Power (Max)
82 W
Fall Time
39 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
82W (Tc)

IRFZ46ZSPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFZ46ZSPBF Documents

Infineon
12 Pages / 0.36 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRFZ46 Documents

Vishay Siliconix
MOSFET N-Chan 60V 50A
International Rectifier
50V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
New Jersey Semiconductor
Trans MOSFET N-CH 50V 50A 3Pin(3+Tab) TO-220ABO
IRF
Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)
Infineon
TO-220AB N-CH 55V 53A
Infineon
D2PAK N-CH 55V 53A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de
Infineon
TO-262 N-CH 55V 53A
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