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Part Datasheet Search > IGBTs > Infineon > IRGIB10B60KD1P Datasheet PDF
IRGIB10B60KD1P
$ 1.409
IRGIB10B60KD1P Datasheet PDF (13 Pages)
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IRGIB10B60KD1P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
44 W
Power Dissipation
44 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
79 ns
Input Power (Max)
44 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
44000 mW

IRGIB10B60KD1P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
9.02 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRGIB10B60KD1P Documents

Infineon
13 Pages / 0.38 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
1 Pages / 0.12 MByte

IRGIB10B60KD1 Documents

International Rectifier
IGBT 600V 16A 44W TO220FP
Infineon
Trans IGBT Chip N-CH 600V 16A 44000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Infineon
Trans IGBT Chip N-CH 600V 16A 44000mW 3Pin(3+Tab) TO-220 Full-Pack Tube
International Rectifier
Trans IGBT Chip N-CH 600V 16A 44000mW 3Pin(3+Tab) TO-220 Full-Pack Tube
Infineon
Trans IGBT Chip N-CH 600V 16A 44000mW 3Pin(3+Tab) TO-220 Full-Pack
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