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Part Datasheet Search > IGBTs > ON Semiconductor > NGTB50N60FLWG Datasheet PDF
NGTB50N60FLWG
$ 1.3
NGTB50N60FLWG Datasheet PDF (10 Pages)
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NGTB50N60FLWG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Power Dissipation
223 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
85 ns
Input Power (Max)
223 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
223000 mW

NGTB50N60FLWG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.08 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NGTB50N60FLWG Documents

ON Semiconductor
10 Pages / 0.17 MByte
ON Semiconductor
13 Pages / 0.45 MByte
ON Semiconductor
2 Pages / 0.17 MByte

NGTB50N60 Documents

ON Semiconductor
IGBT Single Transistor, 100A, 1.45V, 223W, 600V, TO-247, 3Pins
ON Semiconductor
Trans IGBT Chip N-CH 600V 100A 223000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 100A 417000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 100A 417000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 100A 500000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 100A 3Pin TO-247 Tube
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