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Part Datasheet Search > IGBTs > Infineon > IRGIB15B60KD1P Datasheet PDF
IRGIB15B60KD1P
$ 1.522
IRGIB15B60KD1P Datasheet PDF (13 Pages)
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IRGIB15B60KD1P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
52 W
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
52 W
Rise Time
35.0 ns
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
67 ns
Input Power (Max)
52 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
52000 mW

IRGIB15B60KD1P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.63 mm
Size-Width
4.83 mm
Size-Height
16.12 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRGIB15B60KD1P Documents

Infineon
13 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.19 MByte

IRGIB15B60KD1 Documents

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International Rectifier
Trans IGBT Chip N-CH 600V 19A 3Pin(3+Tab) TO-220 Full-Pack
Infineon
Trans IGBT Chip N-CH 600V 19A 3Pin(3+Tab) TO-220 Full-Pack
Infineon
Trans IGBT Chip N-CH 600V 19A 52000mW 3Pin(3+Tab) TO-220 Full-Pack
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