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STD6N65M2 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

High Voltage MOS

Case Package:

TO-252-3

Description:

STMICROELECTRONICS STD6N65M2 Power MOSFET, N Channel, 4A, 650V, 1.2Ω, 10V, 3V

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STD6N65M2 Datasheet PDF (1 Pages)

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STD6N65M2 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

1.2 Ω

Polarity

N-Channel

Power Dissipation

60 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

650 V

Rise Time

7 ns

Input Capacitance (Ciss)

226pF @100V(Vds)

Fall Time

20 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

60W (Tc)

STD6N65M2 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

STD6N65M2 Environmental

STD6N65M2 Function Overview

STD6N65M2 Documents

STD6N65M2 Other Datasheet PDF

ST Microelectronics

1 Pages / 0.42 MByte

STD6N65M2 Packaging

ST Microelectronics

23 Pages / 0.86 MByte

STD6N65 Documents

STD6N65M2 Datasheet PDF

ST Microelectronics

STMICROELECTRONICS STD6N65M2 Power MOSFET, N Channel, 4A, 650V, 1.2Ω, 10V, 3V

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