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Part Datasheet Search > MOSFETs > VISHAY > IRL510PBF Datasheet PDF
IRL510PBF
$ 0.761
IRL510PBF Datasheet PDF (9 Pages)
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IRL510PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
5.60 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.54 Ω
Polarity
N-Channel
Power Dissipation
43 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
5.60 A
Rise Time
47 ns
Input Capacitance (Ciss)
250pF @25V(Vds)
Input Power (Max)
43 W
Fall Time
18 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.7 W

IRL510PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
Minimum Packing Quantity
50

IRL510PBF Documents

VISHAY
9 Pages / 1.12 MByte

IRL510 Documents

Vishay Siliconix
MOSFET N-CH 100V 5.6A TO-220AB
VISHAY
TO-220AB N-CH 100V 5.6A
Vishay Semiconductor
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
Samsung
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Fairchild
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TI
5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
VISHAY
TO-220-3 N-CH 100V 5.6A 540mΩ
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