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IRL520PBF
$ 1.011
IRL520PBF Datasheet PDF (9 Pages)
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IRL520PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
9.20 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.27 Ω
Polarity
N-Channel
Power Dissipation
60 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
9.20 A
Rise Time
64 ns
Input Capacitance (Ciss)
490pF @25V(Vds)
Input Power (Max)
60 W
Fall Time
27 ns
Operating Temperature (Max)
175 ℃
Power Dissipation (Max)
60W (Tc)

IRL520PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃
Minimum Packing Quantity
50

IRL520PBF Documents

VISHAY
9 Pages / 1.13 MByte
VISHAY
9 Pages / 1.12 MByte
VISHAY
3 Pages / 0.14 MByte

IRL520 Documents

VISHAY
TO-220 N-CH 100V 9.2A
Vishay Siliconix
MOSFET N-CH 100V 9.2A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 9.2A 3Pin(3+Tab) TO-220
Vishay Intertechnology
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Samsung
Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Fairchild
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
TI
9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Infineon
TO-220AB N-CH 100V 10A
Infineon
D2PAK N-CH 100V 10A
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