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IRL520PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.27Ω; ID 9.2A; TO-220AB; PD 60W; VGS +/-10V

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Documentation:

IRL520PBF Datasheet (10 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRL520PBF Datasheet PDF (10 Pages)

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IRL520PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

100 V

Current Rating

9.20 A

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.27 Ω

Polarity

N-Channel

Power Dissipation

60 W

Threshold Voltage

2 V

Input Capacitance

490pF @25V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

9.20 A

Rise Time

64 ns

Fall Time

27 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

View Datasheet >

IRL520PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.51 mm

Size-Width

4.7 mm

Size-Height

15.49 mm

Operating Temperature

-55℃ ~ 175℃

View Datasheet >

IRL520PBF Environmental

IRL520PBF Function Overview

IRL520PBF Documents

IRL520PBF Datasheet

Vishay Semiconductor

10 Pages / 1.13 MByte

IRL520PBF Other Datasheet PDF

Vishay Semiconductor

9 Pages / 1.12 MByte

IRL520PBF Notice File

Vishay Semiconductor

3 Pages / 0.14 MByte

IRL520 Documents

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VISHAY

TO-220 N-CH 100V 9.2A

IRL520 Datasheet PDF

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MOSFET N-CH 100V 9.2A TO-220AB

IRL520 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 100V 9.2A 3Pin(3+Tab) TO-220

IRL520 Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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Infineon

Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

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IRL520 Datasheet PDF

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