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Part Datasheet Search > MOSFETs > VISHAY > IRL530PBF Datasheet PDF
IRL530PBF
$ 0.909
IRL530PBF Datasheet PDF (9 Pages)
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IRL530PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.16 Ω
Polarity
N-Channel
Power Dissipation
88 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
15.0 A
Rise Time
100 ns
Input Capacitance (Ciss)
930pF @25V(Vds)
Input Power (Max)
88 W
Fall Time
48 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
88 W

IRL530PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
Minimum Packing Quantity
50

IRL530PBF Documents

VISHAY
9 Pages / 1.11 MByte
VISHAY
9 Pages / 1.11 MByte
VISHAY
3 Pages / 0.14 MByte

IRL530 Documents

Vishay Siliconix
MOSFET N-CH 100V 15A TO-220AB
VISHAY
TO-220AB N-CH 100V 15A
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packaget
Vishay Semiconductor
Trans MOSFET N-CH 100V 15A 3Pin(3+Tab) TO-220AB
Fairchild
Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
15A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
IRF
HEXFET Power MOSFET
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