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Part Datasheet Search > MOSFETs > Infineon > IRL6372PBF Datasheet PDF
IRL6372PBF
Part 3D Model
$ 0.356
IRL6372PBF Datasheet PDF (8 Pages)
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IRL6372PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.014 Ω
Polarity
Dual N-Channel
Power Dissipation
2 W
Threshold Voltage
1.1 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
8.1A
Input Capacitance (Ciss)
1020pF @25V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2 W

IRL6372PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRL6372PBF Documents

Infineon
8 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
12 Pages / 0.56 MByte

IRL6372 Documents

Infineon
30V Dual N-Channel Low Logic Level HEXFET Power MOSFET in a SO-8 Lead-Free package
Infineon
SOIC N-CH 30V 8.1A
Infineon
SOIC N-CH 30V 8.1A
International Rectifier
Trans MOSFET N-CH 30V 8.1A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 8.1A 8Pin SOIC Tube
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