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IXTQ22N60P
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IXTQ22N60P Datasheet PDF (5 Pages)
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IXTQ22N60P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
22.0 A
Case/Package
TO-3-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
350 mΩ
Power Dissipation
400 W
Input Capacitance
3.60 nF
Gate Charge
62.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
22.0 A
Rise Time
20 ns
Input Capacitance (Ciss)
3600pF @25V(Vds)
Fall Time
23 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
400W (Tc)

IXTQ22N60P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.8 mm
Size-Width
4.9 mm
Size-Height
20.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTQ22N60P Documents

IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte

IXTQ22N60 Documents

IXYS Semiconductor
Trans MOSFET N-CH 600V 22A 3Pin(3+Tab) TO-3P
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