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IRLL014TR
$ 0.046
IRLL014TR Datasheet PDF (9 Pages)
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IRLL014TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-223-3
Power Dissipation
2W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vds)
60 V
Input Capacitance (Ciss)
400pF @25V(Vds)
Power Dissipation (Max)
2W (Ta), 3.1W (Tc)

IRLL014TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRLL014TR Documents

Vishay Siliconix
9 Pages / 0.16 MByte
Vishay Siliconix
8 Pages / 0.16 MByte

IRLL014 Documents

International Rectifier
MOSFET N-CH 60V 2.7A SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
VISHAY
SOT-223 N-CH 60V 2.7A
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
Infineon
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4
Infineon
SOT-223 N-CH 55V 2.8A
Infineon
SOT-223 N-CH 55V 2.8A
International Rectifier
Trans MOSFET N-CH 55V 2.8A 4Pin(3+Tab) SOT-223 T/R
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
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