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IRLL014TRPBF
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IRLL014TRPBF Datasheet PDF (8 Pages)
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IRLL014TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-223
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
N-Channel
Power Dissipation
3.1 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
2.70 A
Rise Time
110 ns
Fall Time
26 ns
Operating Temperature (Max)
150 ℃

IRLL014TRPBF Size & Package

TYPE
DESCRIPTION
Operating Temperature
-55℃ ~ 150℃

IRLL014TRPBF Documents

Vishay Semiconductor
8 Pages / 0.15 MByte
Vishay Semiconductor
9 Pages / 0.16 MByte
Vishay Semiconductor
8 Pages / 0.58 MByte

IRLL014 Documents

International Rectifier
MOSFET N-CH 60V 2.7A SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
VISHAY
SOT-223 N-CH 60V 2.7A
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
Infineon
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4
Infineon
SOT-223 N-CH 55V 2.8A
Infineon
SOT-223 N-CH 55V 2.8A
International Rectifier
Trans MOSFET N-CH 55V 2.8A 4Pin(3+Tab) SOT-223 T/R
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
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