IRLML2502PBF

$ 0.114

IRLML2502PBF Datasheet PDF - International Rectifier

Manufacturer:

International Rectifier

Category:

MOSFETs

Case Package:

SOT-23

Description:

The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

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Documentation:

IRLML2502PBF Datasheet (9 Pages)

Package Outline Dimension on7 Page

IRLML2502PBF Datasheet PDF (9 Pages)

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IRLML2502PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23

Drain to Source Resistance (on) (Rds)

45 mΩ

Polarity

N-Channel

Power Dissipation

1.25 W

Threshold Voltage

1.2 V

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

4.20 A

Rise Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Junction Temperature (Max)

150 ℃

View Datasheet >

IRLML2502PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Cut Tape (CT)

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

IRLML2502PBF Environmental

IRLML2502PBF Function Overview

IRLML2502PBF Documents

IRLML2502PBF Datasheet

International Rectifier

9 Pages / 0.19 MByte

IRLML2502 Documents

IRLML2502 Datasheet PDF

International Rectifier

HEXFET, N채널, Vd = 20V, Rds = 0.045Ω, Id = 4.2A, SOT-23패키지

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SOT-23 N-CH 20V 4.2A

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IRLML2502TRPBF Datasheet PDF

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SOT-23 N-CH 20V 4.2A

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MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.035Ω; ID 4.2A; Micro3; PD 1.25W; VGS +/-12V

IRLML2502GTRPBF Datasheet PDF

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SOT-23 N-CH 20V 4.2A

IRLML2502PBF Datasheet PDF

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SOT-23 N-CH 20V 4.2A

IRLML2502TR Datasheet PDF

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MOSFET N-CH 20V 4.2A SOT-23

IRLML2502PBF Datasheet PDF

International Rectifier

The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

IRLML2502GTRPBF Datasheet PDF

International Rectifier

Trans MOSFET N-CH 20V 4.2A 3Pin SOT-23 T/R

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