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Part Datasheet Search > N Channel MOSFET > International Rectifier > IRLR024N Datasheet PDF
IRLR024N
$ 0.51
IRLR024N Datasheet PDF (11 Pages)
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IRLR024N Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
55.0 V
Current Rating
17.0 A
Case/Package
DPAK-252
Drain to Source Resistance (on) (Rds)
65 mΩ
Polarity
N-Channel
Power Dissipation
45 W
Part Family
IRLR024N
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55.0V (min)
Continuous Drain Current (Ids)
17.0 A
Rise Time
74.0 ns

IRLR024N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)

IRLR024N Documents

International Rectifier
11 Pages / 0.3 MByte

IRLR024 Documents

Vishay Siliconix
MOSFET N-CH 60V 14A DPAK
VISHAY
TO-252-3 N-CH 60V 14A 100mΩ
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, DPAK-3
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Infineon
TO-252
Samsung
Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Infineon
DPAK N-CH 55V 17A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
Infineon
DPAK N-CH 55V 17A
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