$ 0.239

IRLU120NPBF Datasheet PDF - International Rectifier

Manufacturer:

International Rectifier

Category:

MOSFETs

Case Package:

TO-251-3

Description:

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; I-Pak (TO-251AA); PD 48W

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IRLU120NPBF Datasheet (11 Pages)

Package Outline Dimension on8 Page 9 Page

IRLU120NPBF Datasheet PDF (11 Pages)

View Datasheet

Click page to view the detail

IRLU120NPBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

100 V

Current Rating

10.0 A

Case/Package

TO-251-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

0.265 Ω

Polarity

N-Channel

Power Dissipation

48 W

Part Family

IRLU120N

Input Capacitance

440pF @25V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

10.0 A

Rise Time

35.0 ns

Input Capacitance (Ciss)

440pF @25V(Vds)

Input Power (Max)

48 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

View Datasheet >

IRLU120NPBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

6.73 mm

Size-Height

6.22 mm

Operating Temperature

-55℃ ~ 175℃

View Datasheet >

IRLU120NPBF Environmental

IRLU120NPBF Function Overview

IRLU120NPBF Documents

IRLU120NPBF Datasheet

International Rectifier

11 Pages / 0.17 MByte

IRLU120NPBF Other Datasheet PDF

International Rectifier

11 Pages / 0.28 MByte

IRLU120 Documents

IRLU120 Datasheet PDF

Vishay Siliconix

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

IRLU120 Datasheet PDF

Samsung

Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

IRLU120 Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

IRLU120 Datasheet PDF

Infineon

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

IRLU120 Datasheet PDF

International Rectifier

(IRLR120 / IRLU120) HEXFET Power MOSFET

IRLU120 Datasheet PDF

VISHAY

IPAK N-CH 100V 7.7A

IRLU120 Datasheet PDF

Fairchild

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

IRLU120 Datasheet PDF

Vishay Semiconductor

POWER MOSFET

IRLU120NPBF Datasheet PDF

Infineon

IPAK N-CH 100V 10A

IRLU120NPBF Datasheet PDF

International Rectifier

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; I-Pak (TO-251AA); PD 48W

Part Datasheet PDF Search

72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Relate Parts

Popular Parts

New Parts

08055C104KAT2A FDC658AP STM32F205RET6 OP07DP CD4066BM IRF9540NPBF TPS70950DBVR STM32F103C8T6 CL31B475KBHNNNE

More Popular Parts Datasheet

BOM Matching Tool

Matching parts

Alternative parts

Warning risks

Computing costs

Upload BOM File

File format: *.xlsx, *.xls, *.csv

Online 3D Gerber Viewer

Modeling in 15s

Preview PCB

40 types of layers

Preflight Risk

Upload Gerber File

Support standard RS-274X file, accept zip rar or 7z